EPC expands its portfolio of off-the-shelf GaN FETs in thermally enhanced packages with the introduction of the 100-V, 3.8-mΩ EPC2306. The gadget is footprint-compatible with the beforehand launched 100-V, 1.8-mΩ EPC2302. Engineers can commerce off on-resistance versus worth to optimize designs for effectivity or value by dropping in a unique half quantity in the identical PCB footprint.
The EPC2306 enhancement-mode GaN energy transistor is meant for 48-V DC/DC conversion in high-density computing, 48-V BLDC motor drives for e-mobility and robotics, photo voltaic optimizers and microinverters, and Class D audio purposes. Along with low RDS(on) of three.8 mΩ, the FET offers low QG, QGD, and QOSS for low conduction and switching losses. Its thermally enhanced QFN bundle has an uncovered prime and a footprint of simply 3×5 mm.
A half-bridge growth board that includes the EPC2306 GaN FET simplifies the analysis course of to hurry time to market. With a most voltage of 100 V and most output present of 45 A, the EPC90145 mounts all important parts on a 50.8×50.8-mm board.
Accessible now from Digi-Key, the EPC2306 GaN FET prices $3.08 in plenty of 1000 models, whereas the EPC90145 growth board prices $200.
EPC2306 product web page
EPC90145 product web page
Environment friendly Energy Conversion
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